1/9 june 2001 . STD6NF10 n-channel 100v - 0.22 w - 6a ipak/dpak low gate charge stripfet? power mosfet n typical r ds (on) = 0.22 w n exceptional dv/dt capability n 100% avalanche tested n low threshold drive n through-hole ipak (to-251) power package in tube (suffix -1") n surface-mounting dpak (to-252) power package in tape & reel (suffix t4") description this mosfet series realized with stmicroelectronics unique stripfet process has specifically been designed to minimize input capacitance and gate charge. it is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated dc-dc converters for telecom and computer applications. it is also intended for any applications with low gate drive requirements. applications n high-efficiency dc-dc converters n ups and motor control type v dss r ds(on) i d STD6NF10 100 v <0.250 w 6 a 3 2 1 1 3 ipak to-251 (suffix -1) dpak to-252 (suffix t4) absolute maximum ratings ( ) pulse width limited by safe operating area. (1) i sd 6a, di/dt 300a/s, v dd v (br)dss , t j t jmax (2) starting t j = 25 o c, i d = 3a, v dd = 50v symbol parameter value unit v ds drain-source voltage (v gs = 0) 100 v v dgr drain-gate voltage (r gs = 20 k w ) 100 v v gs gate- source voltage 20 v i d drain current (continuos) at t c = 25c 6a i d drain current (continuos) at t c = 100c 4a i dm( ) drain current (pulsed) 24 a p tot total dissipation at t c = 25c 30 w derating factor 0.2 w/c dv/dt (1) peak diode recovery voltage slope 40 v/ns e as (2) single pulse avalanche energy 200 mj t stg storage temperature -65 to 175 c t j max. operating junction temperature internal schematic diagram .com .com .com 4 .com u datasheet
STD6NF10 2/9 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (1 ) dynamic rthj-case rthj-amb t j thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose max max typ 5 100 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 100 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 1 a symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 24v r ds(on) static drain-source on resistance v gs = 10 v i d = 3 a 0.22 0.25 w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds > i d(on) x r ds(on)max, i d =3 a 34 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 280 45 20 pf pf pf .com .com .com .com 4 .com u datasheet
3/9 STD6NF10 switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 50 v i d = 3 a r g = 4.7 w v gs = 10 v (resistive load, figure 3) 6 10 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 80 v i d = 6 a v gs = 10 v 10 2.5 4 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 50 v i d = 6 a r g = 4.7 w, v gs = 10 v (resistive load, figure 3) 20 3 ns ns t d(voff) t f t c off-voltage rise time fall time cross-over time v clamp = 80 v i d = 6 a r g = 4.7 w, v gs = 10 v (inductive load, figure 5) 19 8 15 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 6 24 a a v sd (*) forward on voltage i sd = 6 a v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 6 a di/dt = 100a/s v dd = 10 v t j = 150c (see test circuit, figure 5) 70 175 5 ns nc a electrical characteristics (continued) safe operating area thermal impedance .com .com .com .com 4 .com u datasheet
STD6NF10 4/9 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations .com .com .com .com 4 .com u datasheet
5/9 STD6NF10 normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics . . . .com .com .com .com 4 .com u datasheet
STD6NF10 6/9 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times .com .com .com .com 4 .com u datasheet
7/9 STD6NF10 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e .com .com .com .com 4 .com u datasheet
STD6NF10 8/9 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b2 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l2 0.8 0.031 l4 0.6 1 0.023 0.039 == d l2 l4 1 3 == b e == b2 g 2 a c2 c h a1 detail "a" a2 detail "a" to-252 (dpak) mechanical data 0068772-b .com .com .com .com 4 .com u datasheet
9/9 STD6NF10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2001 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com .com .com .com 4 .com u datasheet
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